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BSC060N10NS3GATMA1 +BOM

Packaged in TDSON-8 for easy installation and low thermal resistance

Produttore:

INFINEON
ProduttorePart #:

BSC060N10NS3GATMA1
Scheda dati:

BSC060N10NS3GATMA1 Scheda dati (PDF)
Pbfree Code:

No
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per BSC060N10NS3GATMA1

BSC060N10NS3GATMA1 Descrizione generale

The BSC060N10NS3GATMA1 is a high-performance N-channel MOSFET designed for various automotive and industrial applications. With a continuous drain current of 90A and a drain source voltage of 100V, this MOSFET offers excellent efficiency and reliability in power management systems. The on-resistance of 0.0053ohm and a threshold voltage of 2.7V further enhance its performance capabilities. The transistor case style is TDSON, featuring 8 pins for easy installation and connectivity. With a maximum operating temperature of 150°C and a power dissipation of 125W, this MOSFET can withstand harsh environmental conditions and high-power demands

Specifiche

Source Content uid	BSC060N10NS3GATMA1	Pbfree Code	No
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	230 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	14.9 A	Drain-source On Resistance-Max	0.006 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-N8
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	8
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	360 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	TIN	Terminal Form	NO LEAD
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	90 A
Rds On - Drain-Source Resistance	5.3 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	68 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	125 W	Channel Mode	Enhancement
Tradename	OptiMOS	Series	OptiMOS 3
Fall Time	12 ns	Forward Transconductance - Min	43 S
Height	1.27 mm	Length	5.9 mm
Product Type	MOSFET	Rise Time	16 ns
Factory Pack Quantity	5000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	45 ns
Typical Turn-On Delay Time	20 ns	Width	5.15 mm
Part # Aliases	BSC060N10NS3 G SP000446584	Unit Weight	0.004030 oz

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