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BSC059N04LSG +BOM

High power N-channel MOSFET with optimized performance

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

BSC059N04LSG
Scheda dati:

BSC059N04LSG Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

8
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per BSC059N04LSG

BSC059N04LSG Descrizione generale

Infineon Technologies' BSC059N04LS G power MOSFET is tailor-made for automotive use, offering a voltage rating of 40V and a continuous drain current of 80A. Featuring a low on-state resistance (RDS(on)) of 5.9 mΩ, this N-channel device delivers outstanding efficiency in power conversion, minimizing power losses and optimizing overall system performance. Its PG-TDSON-8 package provides both thermal efficiency and robustness, making it well-suited for the challenging automotive environment. Furthermore, the package's compatibility with automated surface mount assembly processes ensures easy integration into circuit boards. Whether applied in motor control, lighting, or DC-DC converter applications, the BSC059N04LS G proves to be a valuable asset in enhancing system efficiency in modern vehicles

Specifiche

Source Content uid	BSC059N04LSG	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	8
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Additional Feature	LOGIC LEVEL COMPATIBLE	Avalanche Energy Rating (Eas)	25 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V	Drain Current-Max (ID)	16 A
Drain-source On Resistance-Max	0.0059 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	50 W
Pulsed Drain Current-Max (IDM)	292 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	16A (Ta), 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 23µA	Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	3200 pF @ 20 V
Power Dissipation (Max)	2.5W (Ta), 50W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	BSC059

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