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BSC040N08NS5ATMA1 +BOM

Maximum current rating of 100A

Produttore:

INFINEON
ProduttorePart #:

BSC040N08NS5ATMA1
Scheda dati:

BSC040N08NS5ATMA1 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per BSC040N08NS5ATMA1

BSC040N08NS5ATMA1 Descrizione generale

The BSC040N08NS5ATMA1 is a top-of-the-line power MOSFET from Infineon, designed for synchronous rectification in telecom and server power supplies. Its features, such as low R DS(on) and reduced output capacitance, make it ideal for high switching frequency applications, resulting in significant reduction of switching and conduction losses. This ultimately leads to increased system efficiency and power density. With its versatility, the OptiMOS 5 80V MOSFETs can also be used in a variety of industrial applications including solar, low voltage drives, and adapters. Its benefits include minimal voltage overshoot, reduced need for paralleling, and enhanced performance in a range of applications, from telecom and server setups to light electric vehicles and more

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	53 Weeks, 1 Day	Avalanche Energy Rating (Eas)	120 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	19 A
Drain-source On Resistance-Max	0.004 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-F8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL	Pulsed Drain Current-Max (IDM)	400 A
Surface Mount	YES	Terminal Finish	TIN
Terminal Form	FLAT	Terminal Position	DUAL
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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