Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

2N7002K-T1-E3 +BOM

MOSFET 60V Vds 20V Vgs SOT-23

Produttore:

VISHAY
ProduttorePart #:

2N7002K-T1-E3
Scheda dati:

2N7002K-T1-E3 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Additional Feature:

LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING
Configuration:

SINGLE WITH BUILT-IN DIODE
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 2N7002K-T1-E3

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

2N7002K-T1-E3 Descrizione generale

Product 2N7002K-T1-E3 is a small signal N-channel MOSFET with a drain-source voltage rating of 60V and a continuous drain current of 0.3A. This field-effect transistor is designed for use in applications requiring efficient switching and amplification of low-power signals. With a compact TO-236AB package, this MOSFET is easy to integrate into various electronic circuits. The silicon construction ensures high performance and reliability, while the metal-oxide semiconductor technology enables precise control of the transistor's characteristics

Caratteristiche principali

High speed switching
Fast recovery time: 100 ns
Low input capacitance: 10 pF

Applicazione

Direct Logic-Level Interface: TTL/CMOS |Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc. |Battery Operated Systems |Solid-State Relays

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Additional Feature	LOW THRESHOLD, ESD PROTECTION, FAST SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	60 V	Drain Current-Max (ID)	0.3 A
Drain-source On Resistance-Max	4 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation Ambient-Max	0.35 W
Power Dissipation-Max (Abs)	0.35 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..