Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

2N4427 +BOM

Power-efficient NPN transistor for TO- package

Produttore:

Microchip
ProduttorePart #:

2N4427
Scheda dati:

2N4427 Scheda dati (PDF)
Transistor Type:

NPN
Voltage - Collector Emitter Breakdown (Max):

40V
Frequency - Transition:

500MHz
Gain:

10dB @ 175MHz
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 2N4427

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

2N4427 Descrizione generale

The 2N4427 is a bipolar junction transistor (BJT) that is typically used for general-purpose amplification and switching applications. It is part of the 2N series of transistors, which includes a variety of NPN and PNP transistors designed for different voltage, current, and power requirements.

Caratteristiche principali

Silicon NPN, To-39 packaged VHF/UHF Transistor
1 Watt Minimum Power Output @ 175 MHz
500 MHz Current-Gain Bandwidth Product @ 50mA
Power Gain, GPE = 10dB (Min) @ 175 MHz

Applicazione

Amplifiers: It can be used in small-signal amplification stages of audio amplifiers, preamplifiers, and RF (radio frequency) amplifiers.
Switching Applications: The transistor can be used as a switch to control larger currents or voltages by applying a smaller control current to the base terminal.
Oscillators: It can be used in oscillator circuits for generating different waveforms.
Signal Processing: In signal processing circuits and analog electronics.
Audio Applications: Commonly used in audio amplifier circuits for amplifying low-level audio signals.
Voltage Regulators: It can be part of voltage regulator circuits to stabilize and control output voltage.
General Electronics: Used in various electronic projects and prototypes for signal amplification and switching purposes.

Specifiche

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Bipolar RF Transistors	Series	-
Transistor Type	NPN	Voltage - Collector Emitter Breakdown (Max)	40V
Frequency - Transition	500MHz	Noise Figure (dB Typ @ f)	-
Gain	10dB @ 175MHz	Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 100mA, 5V	Current - Collector (Ic) (Max)	400mA
Operating Temperature	-	Mounting Type	Through Hole
place	United States of America	launch_date	Aug 7, 2014
last_inspection_date	13 MAY 2023	supplier_cage_code	2D085
htsusa		schedule_b
ppap	False	aec

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..