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TSM4459CS RLG +BOM

30V P-Channel MOSFET TSM4459CS RLG: 17A, 8-Pin SOP Package, Tape and Reel

Produttore:

Taiwan Semiconductor
ProduttorePart #:

TSM4459CS RLG
Scheda dati:

TSM4459CS RLG Scheda dati (PDF)
ECCN (US):

EAR99
HTS:

8541.29.00.95
Automotive:

No
PPAP:

No
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per TSM4459CS RLG

TSM4459CS RLG Descrizione generale

The TSM4459CS RLG MOSFET is a cutting-edge semiconductor device that offers high-performance capabilities in a compact package. Ideal for high-side switching applications, this dual N-channel enhancement-mode MOSFET is engineered to deliver efficient power management and reliable operation. With a low threshold voltage and a high drain-source voltage rating, the TSM4459CS RLG ensures optimal power handling while minimizing losses. Its dual-channel design allows for versatile usage, enabling bidirectional current flow and facilitating complex circuit designs. Moreover, the MOSFET is optimized for low on-resistance, ensuring minimal power wastage and improved efficiency in switching applications. Its fast switching characteristics further enhance performance by reducing switching losses and enabling swift response times. Additionally, the TSM4459CS RLG is equipped with built-in protection features such as thermal shutdown and overcurrent protection, offering peace of mind against potential damage from extreme temperatures or current surges

Caratteristiche principali

Compact and highly efficient power management IC
Fast switching speed with low power consumption
Suitable for industrial automation and robotics applications

Applicazione

Advanced technology
Highly versatile
Wide range of applications

Specifiche

ECCN (US)	EAR99	Part Status	Obsolete
HTS	8541.29.00.95	Automotive	No
PPAP	No	Category	Power MOSFET
Configuration	Single	Process Technology	Trench
Channel Mode	Enhancement	Channel Type	P
Number of Elements per Chip	1	Maximum Drain Source Voltage (V)	30
Maximum Gate Source Voltage (V)	±20	Maximum Gate Threshold Voltage (V)	3
Maximum Continuous Drain Current (A)	17	Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	1	Maximum Drain Source Resistance (mOhm)	5.2@10V
Typical Gate Charge @ Vgs (nC)	[email protected]	Typical Input Capacitance @ Vds (pF)	6205@15V
Maximum Power Dissipation (mW)	2500	Typical Fall Time (ns)	92.1
Typical Rise Time (ns)	33.8	Typical Turn-Off Delay Time (ns)	275
Typical Turn-On Delay Time (ns)	75.2	Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150	Packaging	Tape and Reel
Mounting	Surface Mount	PCB changed	8
Pin Count	8	Lead Shape	Gull-wing

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