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Vedi Specifiche Tecniche

STGD5H60DF +BOM

Trench gate field-stop IGBT, H series 600 V, 5 A high speed

Produttore:

ST
ProduttorePart #:

STGD5H60DF
Scheda dati:

STGD5H60DF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per STGD5H60DF

STGD5H60DF Descrizione generale

The STGD5H60DF is a high-performance IGBT featuring a cutting-edge trench gate field-stop structure. This advanced design ensures the device delivers superior conduction and switching capabilities, making it an ideal choice for high-speed converters. The H series designation signifies the perfect balance between conduction and switching losses, allowing for maximum efficiency in demanding applications. Additionally, the device boasts a slightly positive VCE(sat) temperature coefficient, enhancing its stability and performance over a wide range of operating conditions. The STGD5H60DF also offers exceptional parameter distribution, ensuring consistent and reliable operation when multiple devices are used in parallel configurations

Caratteristiche principali

Surge protection rating
Low leakage current
Improved reliability test
Fault-tolerant parallel operation

Specifiche

Source Content uid	STGD5H60DF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	BULK: 1000
Case Connection	COLLECTOR	Collector Current-Max (IC)	10 A
Collector-Emitter Voltage-Max	600 V	Configuration	SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max	6.9 V	Gate-Emitter Voltage-Max	20 V
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
Number of Elements	1	Number of Terminals	2
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	83 W	Surface Mount	YES
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	280 ns
Turn-on Time-Nom (ton)	39 ns	VCEsat-Max	1.95 V

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