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N-Channel 600V MOSFET with 0.9 Ohm typical resistance and 5A current capacity in a DPAK package
DPAK-3 (TO-252-3)Produttore:
ProduttorePart #:
STD5NM60T4
Scheda dati:
Technology:
Si
Mounting Style:
SMD/SMT
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
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The STD5NM60T4 is a N-channel MOSFET transistor designed for high power applications. With a continuous drain current of 5A and a drain source voltage of 650V, this transistor is capable of handling high power loads. The on-resistance (Rds(on)) of 1ohm ensures efficient power conversion, while the threshold voltage of 4V allows for precise control of the transistor. The D-PAK case style and SMD termination type make it suitable for surface mount applications. With a power dissipation of 96W and the ability to handle pulse currents of up to 20A, this transistor is well-suited for demanding environments. Operating within a temperature range of -55°C to +150°C, it can withstand extreme conditions. The compact external dimensions of 2.55mm x 6.8mm x 10.5mm make it suitable for space-constrained designs. With a voltage rating of 600V for Vds and 30V for Vgs, this transistor provides a wide safety margin for voltage spikes and overloads
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 5 A | Rds On - Drain-Source Resistance | 1 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Vgs th - Gate-Source Threshold Voltage | 3 V |
Qg - Gate Charge | 18 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 96 W |
Channel Mode | Enhancement | Tradename | MDmesh |
Series | STD5NM60 | Configuration | Single |
Fall Time | 10 ns | Forward Transconductance - Min | 2.4 S |
Height | 2.4 mm | Length | 6.6 mm |
Product Type | MOSFET | Rise Time | 10 ns |
Factory Pack Quantity | 2500 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | MOSFET |
Typical Turn-Off Delay Time | 23 ns | Typical Turn-On Delay Time | 14 ns |
Width | 6.2 mm | Unit Weight | 0.011640 oz |
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