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Vedi Specifiche Tecniche

STD4NK60ZT4 +BOM

Robust and efficient power management solution for modern electronics

Produttore:

ST
ProduttorePart #:

STD4NK60ZT4
Scheda dati:

STD4NK60ZT4 Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per STD4NK60ZT4

STD4NK60ZT4 Descrizione generale

The STD4NK60ZT4 is a cutting-edge high-voltage device that stands out for its Zener-protected N-channel Power MOSFET technology. Developed by STMicroelectronics using the advanced SuperMESH™ platform, this MOSFET offers improved performance compared to traditional PowerMESH™ solutions. With a significant reduction in on-resistance, the STD4NK60ZT4 is ideal for applications that require high power efficiency and reliability. Its high level of dv/dt capability ensures reliable operation in even the most demanding conditions

Caratteristiche principali

Ultra-high dv/dt capability
Zener-protection for safe operation
100% tested for quality assurance
Low power consumption design

Applicazione

SWITCHING

Specifiche

Source Content uid	STD4NK60ZT4	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Avalanche Energy Rating (Eas)	120 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	4 A
Drain-source On Resistance-Max	2 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	70 W	Pulsed Drain Current-Max (IDM)	16 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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