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STD3NK80ZT4 +BOM

N-channel 800 V, 3.8 Ohm typ., 2.5 A SuperMESH Power MOSFET in DPAK package

Produttore:

ST
ProduttorePart #:

STD3NK80ZT4
Scheda dati:

STD3NK80ZT4 Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per STD3NK80ZT4

STD3NK80ZT4 Descrizione generale

STMicroelectronics' STD3NK80ZT4 MOSFETs are a game-changer in the field of high voltage power devices. By incorporating Zener protection and utilizing the advanced SuperMESH™ technology, these N-channel MOSFETs deliver outstanding performance with significantly reduced on-resistance compared to traditional alternatives. This translates to improved efficiency and reliability in demanding applications where high power is a requirement. Furthermore, the STD3NK80ZT4 devices are specifically engineered to handle high dv/dt levels, ensuring stable operation even in the most challenging conditions. As part of ST's comprehensive portfolio of high voltage MOSFETs, these products complement the revolutionary MDmesh™ series, providing engineers with a complete set of options for their power management needs

Caratteristiche principali

Robust construction and high reliability
Easy installation and maintenance

Applicazione

SWITCHING

Specifiche

Source Content uid	STD3NK80ZT4	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Additional Feature	AVALANCHE RATED	Avalanche Energy Rating (Eas)	170 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	800 V
Drain Current-Max (ID)	2.5 A	Drain-source On Resistance-Max	4.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	70 W
Pulsed Drain Current-Max (IDM)	10 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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