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STD13NM60N +BOM

N-channel 600 V, 280 mOhm typ., 11 A MDmesh II Power MOSFET in a DPAK package

Produttore:

ST
ProduttorePart #:

STD13NM60N
Scheda dati:

STD13NM60N Scheda dati (PDF)
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per STD13NM60N

STD13NM60N Descrizione generale

One standout feature of the STD13NM60N is its low gate charge of 15nC, which enables fast switching speeds and helps to reduce overall power consumption. Additionally, its low input capacitance of 600pF plays a crucial role in minimizing switching losses, ultimately leading to improved efficiency and enhanced performance in power electronics applications

Caratteristiche principali

Fault detection and notification
Advanced thermal management
Silicon-based process technology

Specifiche

Source Content uid	STD13NM60N	Part Life Cycle Code	Active
Pin Count	3	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	17 Weeks, 3 Days
Avalanche Energy Rating (Eas)	200 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	11 A
Drain-source On Resistance-Max	0.36 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252	JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	90 W	Pulsed Drain Current-Max (IDM)	44 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	11 A	Rds On - Drain-Source Resistance	360 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	27 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	90 W
Channel Mode	Enhancement	Tradename	MDmesh
Series	STD13NM60N	Fall Time	10 ns
Product Type	MOSFET	Rise Time	8 ns
Factory Pack Quantity	2500	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	30 ns
Typical Turn-On Delay Time	3 ns	Unit Weight	0.011640 oz

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