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Transistor MOSFET with N-type channel, 100V voltage rating, and 70A current handling capability
TO-263-3Produttore:
INFINEON TECHNOLOGIES AG
ProduttorePart #:
SPB70N10L
Scheda dati:
Part Life Cycle Code:
Obsolete
Pin Count:
4
ECCN Code:
EAR99
Additional Feature:
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
EDA/CAD Modelli:
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This N-channel silicon transistor is constructed using metal-oxide semiconductor technology, providing excellent switching performance and reliability. The TO-263AB package offers a compact and rugged housing, while the plastic material ensures durability and resistance to environmental factors. The 3-pin design allows for easy installation and connectivity, making it suitable for a wide range of applications
Source Content uid | SPB70N10L | Part Life Cycle Code | Obsolete |
Pin Count | 4 | Reach Compliance Code | |
ECCN Code | EAR99 | Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
Avalanche Energy Rating (Eas) | 700 mJ | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 70 A |
Drain-source On Resistance-Max | 0.025 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263AB | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 250 W | Pulsed Drain Current-Max (IDM) | 280 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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