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PC28F640P30TF65A +BOM

Numonyx's Flash Memory chip PC28F640P30TF65A boasts a generous 64Mbit capacity, operates at 3V, and offers a speedy 65ns access time

Produttore:

Alliance Memory
ProduttorePart #:

PC28F640P30TF65A
Scheda dati:

PC28F640P30TF65A Scheda dati (PDF)
Mounting Style:

SMD/SMT
Memory Size:

64 Mbit
Supply Voltage - Min:

1.7 V
Supply Voltage - Max:

2 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F640P30TF65A

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

PC28F640P30TF65A Descrizione generale

Intel's PC28F640P30TF65A NAND Flash memory chip is a top-notch solution for anyone in need of high-density storage with excellent read and write speeds. With a capacity of 64 MB and operating voltage range of 2.7 to 3.6 volts, this chip is suitable for a wide range of applications including embedded systems, consumer electronics, and industrial devices. Its 30nm floating gate CMOS process technology allows for compact storage without compromising on quality and speed

Caratteristiche principali

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to data output synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming (BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or bottom configuration
— 128-KByte main blocks
Voltage and Power
—VCC(core) voltage: 1.7 V – 2.0 V
—VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current: 13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main blocks (top or bottom configuration)
— Absolute write protection: VPP= VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
—Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP package
— 64/128/256/512-Mbit densities in 64-Ball Intel®Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in Intel®QUAD+ SCSP
— 16-bit wide data bus

Specifiche

Product Category	NOR Flash	Mounting Style	SMD/SMT
Memory Size	64 Mbit	Supply Voltage - Min	1.7 V
Supply Voltage - Max	2 V	Active Read Current - Max	28 mA
Interface Type	Parallel	Maximum Clock Frequency	52 MHz
Organization	4 M x 16	Data Bus Width	16 bit
Timing Type	Asynchronous, Synchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Packaging	[ "Tray" ]
Moisture Sensitive	Yes	Product Type	NOR Flash
Speed	65 ns	Factory Pack Quantity	96
Subcategory	Memory & Data Storage

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