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PC28F512P33BFD +BOM

NOR Flash Memory

Produttore:

Alliance Memory
ProduttorePart #:

PC28F512P33BFD
Scheda dati:

PC28F512P33BFD Scheda dati (PDF)
Mounting Style:

SMD/SMT
Memory Size:

512 Mbit
Supply Voltage - Min:

2.3 V
Supply Voltage - Max:

3.6 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F512P33BFD

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

PC28F512P33BFD Descrizione generale

Intel's PC28F512P33BFD flash memory chip is an advanced storage solution with a host of features designed to ensure fast and secure data transfer. With a burst mode for accelerated data transfer, support for both synchronous and asynchronous read operations, and built-in error correction capabilities, this chip offers reliable performance for a variety of electronic devices. Its security feature adds an extra layer of protection, making it an ideal choice for applications requiring secure data storage

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Product Category	NOR Flash	Mounting Style	SMD/SMT
Memory Size	512 Mbit	Supply Voltage - Min	2.3 V
Supply Voltage - Max	3.6 V	Active Read Current - Max	31 mA
Interface Type	Parallel	Maximum Clock Frequency	52 MHz
Organization	32 M x 16	Data Bus Width	16 bit
Timing Type	Asynchronous, Synchronous	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Moisture Sensitive	Yes
Product Type	NOR Flash	Speed	95 ns
Factory Pack Quantity	300	Subcategory	Memory & Data Storage

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