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Vedi Specifiche Tecniche

NTR4170NT1G +BOM

N-Channel 30 V 55 mOhm 0.78 W Surface Mount Power MOSFET - SOT-23

Produttore:

onsemi
ProduttorePart #:

NTR4170NT1G
Scheda dati:

NTR4170NT1G Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

3
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTR4170NT1G

NTR4170NT1G Descrizione generale

The NTR4170NT1G Mosfet from Onsemi is a top-of-the-line N-Channel transistor that delivers exceptional performance and reliability. Its 2.4A Continuous Drain Current capability and 30V Drain-Source Voltage make it suitable for a wide range of electronic projects. The Rds(On) of 0.045Ohm and Threshold Voltage of 1V ensure efficient operation, while the Power Rohs Compliance confirms its adherence to strict quality and sustainability standards. Whether you're designing a new circuit or upgrading an existing one, the NTR4170NT1G Mosfet is the perfect choice for your needs

Caratteristiche principali

Precise Voltage Control
Low Power Consumption
Safe Operating Range
Advanced Temperature Tolerant
Fast Response Time
Reliable Operation Guaranteed

Applicazione

Compact Design
Voltage Regulation
Smart Battery Technology

Specifiche

Source Content uid	NTR4170NT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	77 Weeks	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	3.2 A
Drain-source On Resistance-Max	0.055 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	1.25 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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