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Vedi Specifiche Tecniche

NTJD4401NT1G +BOM

Dual N-Channel Small Signal MOSFET with ESD Protection 20V 630mA 375mΩ

Produttore:

onsemi
ProduttorePart #:

NTJD4401NT1G
Scheda dati:

NTJD4401NT1G Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTJD4401NT1G

NTJD4401NT1G Descrizione generale

The NTJD4401NT1G is a compact N-Channel dual device that boasts a small 2x2 mm footprint. This innovative design, coupled with ON Semiconductor's leading planar process, ensures increased efficiency and performance in a variety of electronic devices. Its low figure of merit makes it an ideal choice for single or dual cell Li-Ion battery supplied devices, such as cell phones, media players, digital cameras, and PDAs. The NTJD4401NT1G is engineered to meet the demands of modern portable electronic devices, providing reliable and efficient power management solutions in a compact form factor

Caratteristiche principali

Ultra-low power consumption
Suitable for IoT applications
Excellent thermal management

Applicazione

Power Management Control
Data Center Applications
Renewable Energy Integration

Specifiche

Source Content uid	NTJD4401NT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	51 Weeks	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	0.63 A
Drain-source On Resistance-Max	0.375 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	5 pF	JESD-30 Code	R-PDSO-G6
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.55 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..