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NTJD4158CT1G +BOM

Dual N & P-Channel 30/20V 1.5mOhm 270 mW Small Signal MOSFET SOT-363

Produttore:

onsemi
ProduttorePart #:

NTJD4158CT1G
Scheda dati:

NTJD4158CT1G Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

6
Reach Compliance Code:

compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTJD4158CT1G

NTJD4158CT1G Descrizione generale

The NTJD4158CT1G is a MOSFET transistor designed for use in various electronic applications where N and P channel complementarity is required. With a continuous drain current of 250mA and a drain-source voltage of 30V, this transistor offers reliable and efficient performance. The on-resistance of 1ohm ensures minimal power loss and high efficiency in circuit operation. The threshold voltage of 1.2V and test voltage of 4.5V make this transistor easy to control and operate. With a power dissipation of 270mW, the NTJD4158CT1G can handle moderate power levels without overheating

Caratteristiche principali

Advanced Thermal Management
Economical Design for Small Size
Wide Operating Temperature Range
Low Power Consumption and High Efficiency
SMT Package for Space Saving
Rohs Compliant for Environmental Protection

Applicazione

Input Voltage Range
Output Voltage Selection
Reverse Polarity Protection

Specifiche

Source Content uid	NTJD4158CT1G	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	6
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8541.29.00.95	Factory Lead Time	51 Weeks
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	0.25 A	Drain-source On Resistance-Max	2.5 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	12 pF
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs)	0.27 W	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	40	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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