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NTHL020N120SC1 +BOM

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-3L

Produttore:

onsemi
ProduttorePart #:

NTHL020N120SC1
Scheda dati:

NTHL020N120SC1 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NTHL020N120SC1

NTHL020N120SC1 Descrizione generale

The NTHL020N120SC1 product is a revolutionary Silicon Carbide (SiC) MOSFET that leverages cutting-edge technology to deliver unparalleled switching performance and superior reliability when compared to traditional Silicon MOSFETs. Its innovative design boasts a significantly lower ON resistance and a compact chip size, resulting in reduced capacitance and gate charge. These features translate into a multitude of benefits for systems utilizing this MOSFET, including higher efficiency levels, increased operational frequencies, enhanced power density, decreased electromagnetic interference (EMI), and a more compact overall system size

Caratteristiche principali

This module is highly efficient.
It supports high-power and high-temperature applications.

Applicazione

High Efficiency
Load Management
Easy Installation

Specifiche

Source Content uid	NTHL020N120SC1	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	61 Weeks
Avalanche Energy Rating (Eas)	264 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	1200 V
Drain Current-Max (ID)	103 A	Drain-source On Resistance-Max	0.028 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	22 pF
JEDEC-95 Code	TO-247	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-55 °C
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	535 W
Pulsed Drain Current-Max (IDM)	412 A	Surface Mount	NO
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..