Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

NTHC5513T1G +BOM

Complementary ChipFET™ Power MOSFET 20V

Produttore:

onsemi
ProduttorePart #:

NTHC5513T1G
Scheda dati:

NTHC5513T1G Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Pin Count:

8
Reach Compliance Code:

compliant

NTHC5513T1G Descrizione generale

The NTHC5513T1G is a MOSFET transistor designed for N and P channel applications with a continuous drain current Id of 2.9A. It operates at a drain source voltage Vds of 20V and has an on resistance Rds(on) of 0.058ohm at a test voltage Vgs of 4.5V. This MOSFET is suitable for a wide range of applications where high performance and reliability are essential

Caratteristiche principali

Industry-Leading Power Density
Compact and Lightweight Design
Excellent Thermal Management
Maintenance-Free Operation Guaranteed
Rapid Charging Capability Available
Sustained High Performance Achieved

Applicazione

Enhances Battery Life
Provides Reliable Performance
Suitable for Portable Electronics

Specifiche

Source Content uid	NTHC5513T1G	Pbfree Code	Yes
Part Life Cycle Code	Obsolete	Pin Count	8
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	28 Weeks	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	20 V	Drain Current-Max (ID)	3.1 A
Drain-source On Resistance-Max	0.08 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-XDSO-C8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	1.1 W
Pulsed Drain Current-Max (IDM)	10 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	C BEND	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Technology	MOSFET (Metal Oxide)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.9A, 2.2A	Rds On (Max) @ Id, Vgs	80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	180pF @ 10V	Power - Max	1.1W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NTHC5513

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..