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NJL1302DG +BOM

Bipolar Power Transistor, PNP, ThermalTrak™, 15 A, 260 V

Produttore:

onsemi
ProduttorePart #:

NJL1302DG
Scheda dati:

NJL1302DG Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Pin Count:

5
Reach Compliance Code:

not_compliant
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NJL1302DG

NJL1302DG Descrizione generale

With its advanced design, the NJL1302DG offers a solution to the common challenges faced in audio amplifier applications. By minimizing thermal equilibrium lag time and eliminating the need for bias trimming, this device streamlines the amplifier's operation and enhances its overall efficiency. Additionally, its versatility extends to other applications, where it can effectively safeguard transistor die, further showcasing its value and utility

Caratteristiche principali

Enhanced noise reduction for superior clarity
Fully encapsulated design for moisture resistance
Superior thermal management and reliability

Applicazione

Top-of-the-line sound reinforcement
High-performance studio monitors

Specifiche

Source Content uid	NJL1302DG	Pbfree Code	Yes
Part Life Cycle Code	Active	Pin Count	5
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	50 Weeks	Additional Feature	HIGH RELIABILITY
Collector Current-Max (IC)	15 A	Collector-Emitter Voltage-Max	260 V
Configuration	SINGLE WITH BUILT-IN DIODE	DC Current Gain-Min (hFE)	45
JESD-30 Code	R-PSFM-T5	JESD-609 Code	e3
Number of Elements	1	Number of Terminals	5
Operating Temperature-Max	150 °C	Polarity/Channel Type	PNP
Power Dissipation-Max (Abs)	200 W	Qualification Status	Not Qualified
Surface Mount	NO	Terminal Finish	MATTE TIN
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Transistor Application	AMPLIFIER	Transistor Element Material	SILICON
Transition Frequency-Nom (fT)	30 MHz	Product Category	Bipolar Transistors - BJT
Mounting Style	Through Hole	Transistor Polarity	PNP
Collector- Emitter Voltage VCEO Max	260 V	Collector- Base Voltage VCBO	260 V
Emitter- Base Voltage VEBO	5 V	Collector-Emitter Saturation Voltage	3 V
Maximum DC Collector Current	15 A	Pd - Power Dissipation	200 W
Gain Bandwidth Product fT	30 MHz	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Series	NJL1302D
DC Collector/Base Gain hfe Min	75	Height	25.98 mm
Length	19.89 mm	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	25	Subcategory	Transistors
Technology	Si	Width	4.89 mm
Unit Weight	0.010582 oz

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..