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IXGH25N160 +BOM

IGBT Transistors rated for 75 Amps and 1600V with 2.5 Ohms on-state resistance

Produttore:

Ixys
ProduttorePart #:

IXGH25N160
Scheda dati:

IXGH25N160 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.6 kV
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXGH25N160

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

IXGH25N160 Descrizione generale

The IXGH25N160 is a high power IGBT (Insulated Gate Bipolar Transistor) designed for high efficiency and high speed switching applications. It has a maximum power dissipation of 225 watts and a continuous collector current of 25 amperes. The IXGH25N160 has a voltage rating of 1600 volts, making it suitable for use in high voltage applications. It has a low VCE(sat) of 2.3 volts at a collector current of 25 amperes, ensuring efficient operation with minimal power loss.This IGBT features a robust and reliable construction, with a maximum junction temperature of 150 degrees Celsius. It is housed in a TO-247 package, which provides excellent thermal performance and allows for easy mounting on a heat sink.The IXGH25N160 is ideal for a wide range of high power applications, including motor drives, power supplies, and inverters. Its high voltage and high current capabilities, combined with its low VCE(sat) and high switching speed, make it a versatile and efficient choice for demanding power electronics designs.

Caratteristiche principali

High voltage IGBT module
Designed for high speed switching
Low VCE(sat) and low switching losses
Isolation voltage of 2500V RMS
Max junction temperature of 175°C
Typical collector current of 50A
Low inductance construction for high frequency operation

Applicazione

High power switching applications
Motor drives
Induction heating
Welding equipment
Switched-mode power supplies
Power factor correction circuits
DC-DC converters
Uninterruptible power supplies
Renewable energy systems

Specifiche

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	1.6 kV	Collector-Emitter Saturation Voltage	2.5 V
Maximum Gate Emitter Voltage	- 20 V, 20 V	Continuous Collector Current at 25 C	75 A
Pd - Power Dissipation	300 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	IXGH25N160
Continuous Collector Current Ic Max	75 A	Height	21.46 mm
Length	16.26 mm	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Width	5.3 mm	Unit Weight	0.229281 oz

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