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Vedi Specifiche Tecniche

IXBH42N170 +BOM

IGBT 1700 V 80 A 360 W Through Hole TO-247AD

Produttore:

Littelfuse Inc
ProduttorePart #:

IXBH42N170
Scheda dati:

IXBH42N170 Scheda dati (PDF)
Series:

BIMOSFET™
Voltage - Collector Emitter Breakdown (Max):

1700 V
Current - Collector (Ic) (Max):

80 A
Current - Collector Pulsed (Icm):

300 A
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXBH42N170

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

IXBH42N170 Descrizione generale

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Caratteristiche principali

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Applicazione

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Specifiche

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	BIMOSFET™
IGBT Type	-	Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	80 A	Current - Collector Pulsed (Icm)	300 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 42A	Power - Max	360 W
Switching Energy	-	Input Type	Standard
Gate Charge	188 nC	Td (on/off) @ 25°C	-
Test Condition	-	Reverse Recovery Time (trr)	1.32 µs
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	IXBH42

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