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IPD50N06S4-09
IPD50N06S4-09
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IPD50N06S4-09 INFINEON Original Wholesale

In Stock: 5.088

TO-252-3 MOSFETs ROHS IPD50N06S4-09

IPD50N06S4-09 Informazione

Descrizione

Infineon Technologies' IPD50N06S4-09 is a power MOSFET designed for high-power applications in automotive, industrial, and power supply industries. With a drain-source voltage of 60 volts and a continuous drain current of 50 amperes, this MOSFET is capable of handling demanding power requirements. Its low on-resistance of 0.009 ohms helps to minimize power losses and improve efficiency in circuit designs. The TO-252 package, known for its surface-mount design and excellent thermal performance, makes the IPD50N06S4-09 easy to mount on circuit boards using standard soldering techniques
IPD50N06S4-09

Specifiche

IDpuls max 200.0 A RthJC max 2.1 K/W
Ptot max 71.0 W Qualification Automotive
VDS max 60.0 V VGS(th) min 2.0 V
RDS (on) max 9.0 mΩ VGS(th) max 4.0 V
QG max 36.0 nC Polarity N
ID max 50.0 A Technology OptiMOS™-T2
Operating Temperature max 175.0 °C Operating Temperature min -55.0 °C
Package/Case TO-252-3

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Reference Price（USD）

Richiesta di prezzo

Quantity

Prezzo unitario

Est. Prezzo

1000+

$1,739

$1.739,00

500+

$1,760

$880,00

100+

$1,806

$180,60

30+

$1,909

$57,27

10+

$2,002

$20,02

1+

$2,172

$2,17

*The prices above are for reference only.

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Shipping Information

  • Shipped From:

    HK warehouse

  • Expected Shipping Date:
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    (HKT)
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  • Supplier Lead-Time:

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*Lead times apply to standard orders and are based on business days only. Please contact us for details.

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