Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

IAUC100N04S6L014ATMA1 +BOM

MOSFET MOSFET_(20V 40V)

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IAUC100N04S6L014ATMA1
Scheda dati:

IAUC100N04S6L014ATMA1 Scheda dati (PDF)
Series:

Automotive, AEC-Q101, OptiMOS™
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

40 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IAUC100N04S6L014ATMA1

IAUC100N04S6L014ATMA1 Descrizione generale

The IAUC100N04S6L014ATMA1 MOSFET is a top-of-the-line component designed to meet the demands of high-power applications. With a voltage rating of 40V and a maximum power dissipation of 100W, this N-channel MOSFET is capable of handling heavy loads with ease. Its on-resistance of 1.4mΩ at 50A ensures minimal power loss and efficient operation, while its 2V gate-to-source voltage at 50uA provides precise control over the device. The TDSON-8 package offers easy mounting and heat dissipation, making it an ideal choice for a wide range of electronic designs

Infineon Technologies Corporation inventario

Caratteristiche principali

OptiMOS
TM
N-channel - Enhancement mode - Logic Level
AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperatureGreen Product (RoHS compliant)
100% Avalanche tested

Infineon Technologies Corporation Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	Automotive, AEC-Q101, OptiMOS™
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V	Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id	2V @ 50µA	Gate Charge (Qg) (Max) @ Vgs	65 nC @ 10 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	3935 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	100W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IAUC100	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	40 V	Id - Continuous Drain Current	100 A
Rds On - Drain-Source Resistance	1.52 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	1.6 V	Qg - Gate Charge	49 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	100 W	Channel Mode	Enhancement
Fall Time	12 ns	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	5000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	5 ns
Part # Aliases	IAUC100N04S6L014 SP001700120	Unit Weight	0.003966 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..