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FQP5N60C +BOM

High Voltage N-Channel MOSFET

Produttore:

onsemi
ProduttorePart #:

FQP5N60C
Scheda dati:

FQP5N60C Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

End Of Life
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FQP5N60C

E-mail: [email protected]

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tel: +852 95804164

FQP5N60C Descrizione generale

The FQP5N60C MOSFET, manufactured by ON Semiconductor, showcases the latest advancements in power semiconductor technology. With its proprietary planar stripe and DMOS technology, this N-Channel enhancement mode MOSFET offers superior performance in terms of reduced on-state resistance and enhanced switching capabilities. Its high avalanche energy strength makes it a top choice for applications like switched mode power supplies, active power factor correction, and electronic lamp ballasts. Designers and engineers can rely on the FQP5N60C to deliver efficient power management and high reliability in a wide range of electronic systems

Caratteristiche principali

Robust construction for reliable operation
Safe operating area ensured
Good thermal stability
Low capacitance and leakage current
Fully tested under various conditions
Excellent overload protection

Applicazione

Radiating
Glistening
Flickering

Specifiche

Source Content uid	FQP5N60C	Pbfree Code	Yes
Part Life Cycle Code	End Of Life	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	100 Weeks, 5 Days
Avalanche Energy Rating (Eas)	210 mJ	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	600 V	Drain Current-Max (ID)	4.5 A
Drain-source On Resistance-Max	2.5 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	100 W	Pulsed Drain Current-Max (IDM)	18 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Finish	MATTE TIN	Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
REACH	Details	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	4.5 A	Rds On - Drain-Source Resistance	2.5 Ohms
Vgs - Gate-Source Voltage	- 30 V, + 30 V	Vgs th - Gate-Source Threshold Voltage	2 V
Qg - Gate Charge	19 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	100 W
Channel Mode	Enhancement	Tradename	QFET
Series	FQP5N60C	Fall Time	46 ns
Forward Transconductance - Min	4.7 S	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	42 ns	Factory Pack Quantity	1000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	10 ns	Width	4.7 mm
Part # Aliases	FQP5N60C_NL	Unit Weight	0.068784 oz

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