Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
Dual N & P-Channel PowerTrench® MOSFET 30V
SOIC-8Produttore:
ProduttorePart #:
FDS8858CZ
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
Invia tutte le distinte materiali a
[email protected],
oppure compila il modulo sottostante per un preventivo su FDS8858CZ. Risposta garantita entro
12hr.
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
With its impressive specifications, the FDS8858CZ stands out as a top-tier dual N-channel PowerTrench MOSFET designed for high-efficiency and low power consumption applications. Boasting a low on-resistance of 16mΩ and a maximum drain current of 35A, it is perfectly suited for power management circuits, DC-DC converters, motor control, and other high-power applications. Its voltage range of -20V to 30V and fast switching speed make it a versatile solution for a wide range of power management needs. The MOSFET's high pulse current capability ensures exceptional power delivery efficiency with minimal power losses. Housed in a compact and thermally efficient PowerTrench package, it delivers enhanced heat dissipation and increased overall reliability. Its low-profile package design makes it an ideal choice for space-constrained applications
Source Content uid | FDS8858CZ | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 58 Weeks |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 8.6 A | Drain-source On Resistance-Max | 0.017 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G8 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 8 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 2 W | Pulsed Drain Current-Max (IDM) | 20 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | - | - |
I prezzi sottostanti sono solo di riferimento.