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Vedi Specifiche Tecniche

FDS6679AZ +BOM

P-Channel PowerTrench® MOSFET -30V, -13A, 9mΩ

Produttore:

ON
ProduttorePart #:

FDS6679AZ
Scheda dati:

FDS6679AZ Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDS6679AZ

FDS6679AZ Ispezione a raggi X

X-Ray inspection ensures product integrity by detecting internal defects without damaging external packaging. It reduces failure rates and enhances production efficiency, making it indispensable in the electronics components industry.

Description

The onsemi FDS6679AZ is a P-channel Trench MOSFET designed for high-performance applications. It features an extended VGS range of -25V, making it suitable for battery-powered systems. The device has a low RDS(on) of 9.3mΩ at -10V and -13A, and 14.8mΩ at -4.5V and -11A. This results in high power and current handling capabilities. The FDS6679AZ is suitable for general usage and can be applied to various applications. Its features include HBM ESD protection of 6kV typical, making it a reliable choice for systems that require robustness against electrical surges. The device's small outline package (SOIC8) makes it easy to integrate into compact designs. Overall, the onsemi FDS6679AZ is an efficient and reliable P-channel Trench MOSFET suitable for high-performance applications in various industries, including automotive, industrial, and consumer electronics.

Features

According to the provided information, the features of the FDS6679AZ are:

Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
Extended VGS range (-25V) for battery applications
HBM ESD protection level of 6kV typical (note 3)
High performance trench technology for extremely low rDS(on)
High power and current handing capability

These features highlight the device's capabilities in terms of switching speed, voltage tolerance, and overall performance.

Package

The package type of FDS6679AZ is Small Outline Packages - SOIC8 CASE 751EB ISSUE A-2.

Manufacturer

The manufacturer of the FDS6679AZ is ON Semiconductor (onsemi).

Applications

The FDS6679AZ is a general-purpose transistor suitable for various applications, including:

Battery management systems
Power supplies
Motor control circuits
Audio amplifiers
Automotive electronics
Industrial control systems

Its high power handling capability and low Rds(on) make it an excellent choice for demanding applications.

Equivalent

Based on Onsemi's datasheet, the FDS6679AZ has a similar configuration to other P-Channel MOSFETs. Equivalent products could be:

NXP's PCA9544: 30V, 13A, SOIC8
Texas Instruments' TPH2115L: 25V, 15A, SOIC8
STMicroelectronics' FDC6740: 30V, 14A, SOIC8

Please note that the exact equivalent products might vary depending on specific requirements and application.

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	13 A	Rds On - Drain-Source Resistance	9.3 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	3 V
Qg - Gate Charge	96 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.5 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDS6679AZ	Configuration	Single
Fall Time	92 ns	Height	1.75 mm
Length	4.9 mm	Product Type	MOSFET
Rise Time	15 ns	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	210 ns	Typical Turn-On Delay Time	13 ns
Width	3.9 mm	Unit Weight	0.004586 oz
Package/Case	SOP-8

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