Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

FDS3890 +BOM

Mosfet Array 80V 4.7A 900mW Surface Mount 8-SOIC

Produttore:

onsemi
ProduttorePart #:

FDS3890
Scheda dati:

FDS3890 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDS3890

FDS3890 Descrizione generale

The FDS3890 is a dual N-channel MOSFET designed for a wide range of applications. With a continuous drain current of 4.7A and a maximum drain-source voltage of 80V, this transistor offers high performance and reliability. The on-resistance Rds(on) of 34mohm and a test voltage Vgs of 10V ensure efficient operation, while the threshold voltage Vgs typ of 2.3V allows for precise control. With a power dissipation of 2W and an operating temperature range of -55°C to +175°C, this MOSFET can withstand harsh environmental conditions. The 8-pin SOIC case style makes it easy to integrate into various circuit designs, while the MSL 1 - Unlimited classification ensures safe storage and handling. As it does not contain any SVHC (Substances of Very High Concern), the FDS3890 is compliant with current regulations. Whether used in power supplies, motor control, or other applications, this MOSFET offers high performance and reliability

Caratteristiche principali

Excellent thermal performance
Low inductance design
High frequency stability

Applicazione

Great for all occasions
Versatile and durable
Perfect for everyday use

Specifiche

Source Content uid	FDS3890	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	50 Weeks
Avalanche Energy Rating (Eas)	175 mJ	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	80 V	Drain Current-Max (ID)	4.7 A
Drain-source On Resistance-Max	0.044 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	2 W
Pulsed Drain Current-Max (IDM)	20 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..