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FDN8601 +BOM

N-Channel PowerTrench® MOSFET 100V, 2.7A, 109mΩ

Produttore:

onsemi
ProduttorePart #:

FDN8601
Scheda dati:

FDN8601 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDN8601

FDN8601 Descrizione generale

The FDN8601 MOSFET, manufactured by Fairchild Semiconductor (now part of ON Semiconductor), is a small signal MOSFET specifically designed for low voltage applications. Its low threshold voltage, typically around 1.5 volts, and low on-resistance (RDS(ON)) of around 0.1 ohms make it an ideal choice for applications such as battery management, power switches, load switches, and portable electronics where minimizing power consumption and maximizing battery life are critical factors. Operating within a wide temperature range of -55°C to 150°C, it ensures reliability and stability in various environmental conditions. Its compact SOT-23 package makes it suitable for surface mount applications, enabling easy integration into circuit designs with limited space constraints

Caratteristiche principali

Low RDS(on) for High Efficiency
Fast Switching for Real-time Applications
Robust Design for Reliable Performance
High Power Handling for Demanding Systems
Compact Size for Space Constrained Designs
Advanced Trench Technology for Enhanced Performance

Applicazione

Stable output voltage
Low power consumption
Wide input voltage range

Specifiche

Source Content uid	FDN8601	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	68 Weeks
Application	SWITCHING	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Surface Mount	YES	Terminal Finish	MATTE TIN
Terminal Form	GULL WING	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Element Material	SILICON

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