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FDMS8333L +BOM

N-Channel PowerTrench® MOSFET 40V, 76A, 3.1mΩ

Produttore:

onsemi
ProduttorePart #:

FDMS8333L
Scheda dati:

FDMS8333L Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMS8333L

FDMS8333L Descrizione generale

The FDMS8333L is a high-performance N-Channel MOSFET meticulously engineered to enhance efficiency and reduce switch node ringing in DC-DC converters. Its design caters to both synchronous and conventional switching PWM controllers, offering unparalleled optimization for low gate charge, minimal RDS(on), swift switching speed, and impeccable body diode reverse-recovery performance. This MOSFET stands out for its ability to deliver superior functionality and reliability in demanding applications where precision and effectiveness are paramount

Caratteristiche principali

Fast switching and low loss for efficient operation
Silicon and package synergy for high reliability
Soft recovery and low RDS(on) for minimized power losses
Rohs compliant for environmental safety

Applicazione

Children
Technology
Environment

Specifiche

Source Content uid	FDMS8333L	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	74 Weeks
Avalanche Energy Rating (Eas)	216 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	40 V
Drain Current-Max (ID)	76 A	Drain-source On Resistance-Max	0.0031 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	55 pF
JEDEC-95 Code	MO-240AA	JESD-30 Code	R-PDSO-F5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Operating Temperature-Min	-55 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	69 W
Pulsed Drain Current-Max (IDM)	250 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON
Turn-off Time-Max (toff)	63 ns	Turn-on Time-Max (ton)	35 ns

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