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FDMS7692 +BOM

N-Channel PowerTrench® MOSFET 30V, 7.5mΩ

Produttore:

onsemi
ProduttorePart #:

FDMS7692
Scheda dati:

FDMS7692 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMS7692

FDMS7692 Descrizione generale

The FDMS7692 MOSFET is purpose-built for high-efficiency DC/DC converters, offering superior performance for power management applications. Its design is focused on minimizing switch node ringing and improving overall efficiency, making it an ideal choice for synchronous or conventional switching PWM controllers. With its optimized low gate charge, low r_DS(on), fast switching speed, and enhanced body diode reverse recovery performance, this MOSFET ensures reliable and efficient operation in power electronics systems

Caratteristiche principali

Max r_DS(on) = 7.5 mΩ at V_GS = 10 V, I_D= 13 A
Max r_DS(on) = 13 mΩ at V_GS = 4.5 V, I_DS= 10 A
Advanced Package and Silicon combination for low r_DS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery.
MSL1 robust package design
100% UIL tested
RoHS Compliant

Applicazione

This product is general usage and suitable for many different applications.

Specifiche

Source Content uid	FDMS7692	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	34 Weeks
Avalanche Energy Rating (Eas)	21 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	14 A	Drain-source On Resistance-Max	0.0075 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-PDSO-N5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	27 W	Pulsed Drain Current-Max (IDM)	50 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..