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Vedi Specifiche Tecniche

FDMS0312AS +BOM

N-Channel PowerTrench® SyncFET™ 30V, 22A, 5.0mΩ

Produttore:

onsemi
ProduttorePart #:

FDMS0312AS
Scheda dati:

FDMS0312AS Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMS0312AS

FDMS0312AS Descrizione generale

Revolutionize your power conversion applications with the FDMS0312AS, a cutting-edge device engineered to minimize energy losses and maximize efficiency. Combining state-of-the-art silicon and packaging technologies, this product delivers unrivaled performance with the lowest on-resistance (RDS(on)) in its class. Its advanced design ensures superior switching characteristics, making it a reliable choice for demanding applications that require precision and reliability. The inclusion of a monolithic Schottky body diode further enhances the device's functionality, setting a new standard for power conversion technology

Caratteristiche principali

Rapid Charging Technology for Efficient Power-Ups
Precise Temperature Control for Optimal Functioning
Low Energy Consumption for Extended Battery Life
Robust Build Quality for Durability and Resistance
Easy Maintenance and Upgrade Capabilities

Applicazione

Cosmetics
Skincare products
Fragrances

Specifiche

Source Content uid	FDMS0312AS	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	44 Weeks
Avalanche Energy Rating (Eas)	33 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	18 A	Drain-source On Resistance-Max	0.005 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	MO-240AA
JESD-30 Code	R-PDSO-F5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	36 W
Pulsed Drain Current-Max (IDM)	100 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	FLAT
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

Politiche di servizio e altro

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..