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FDMC86184 +BOM

N-Channel 100 V 57A (Tc) 54W (Tc) Surface Mount 8-PQFN (3.3x3.3)

Produttore:

ON
ProduttorePart #:

FDMC86184
Scheda dati:

FDMC86184 Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMC86184

FDMC86184 Descrizione generale

The FDMC86184 N-Channel MV MOSFET represents a significant advancement in power semiconductor technology. By leveraging the innovative PowerTrench process and Shielded Gate technology, this MOSFET delivers outstanding performance with reduced on-state resistance and excellent switching characteristics. Additionally, its best-in-class soft body diode ensures maximum efficiency and reliability, making it a top choice for engineers and designers seeking high-quality components

Caratteristiche principali

Economical Power Management
High Efficiency, Low Noise
Ruggedized for Harsh Environments
Fully RoHS Compliant Solutions
Ultra-Low Quiescent Current
Miniaturized Smart Switching

Applicazione

Reliable and durable construction.
Easy to use and convenient.
A must-have for any toolkit.

Specifiche

Source Content uid	FDMC86184	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	17 Weeks, 3 Days
Date Of Intro	2017-02-03	Avalanche Energy Rating (Eas)	121 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	100 V	Drain Current-Max (ID)	57 A
Drain-source On Resistance-Max	0.0085 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	25 pF	JEDEC-95 Code	MO-240BA
JESD-30 Code	S-PDSO-N5	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	5	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	54 W	Pulsed Drain Current-Max (IDM)	266 A
Surface Mount	YES	Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	NO LEAD	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Turn-off Time-Max (toff)	41 ns
Turn-on Time-Max (ton)	32 ns

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