Metodo di pagamento
FDMC7660 +BOM
N-Channel PowerTrench® MOSFET 30V, 20A, 2.2mΩ
Power-33-8-
Produttore:
-
ProduttorePart #:
FDMC7660
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Scheda dati:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Active
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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EDA/CAD Modelli:
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Disponibilità: 4536 PZ
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FDMC7660 Descrizione generale
Fairchild Semiconductor's FDMC7660 is a superior N-channel MOSFET that boasts exceptional performance and reliability, thanks to the company's advanced PowerTrench® process. This process is specifically engineered to minimize on-state resistance, making the FDMC7660 an excellent choice for Power Management and load switching applications commonly found in Notebook Computers and Portable Battery Packs. With its robust design and high efficiency, the FDMC7660 is well-equipped to handle the power demands of modern electronic devices, ensuring smooth and uninterrupted operation
Caratteristiche principali
- Ultra-low noise operation for sensitive applications
- High reliability ensures long-term performance and durability
- Wide input voltage range up to 36V
- Excellent thermal performance ensures stable operation
Applicazione
- Multi-purpose product
- Adaptable to different needs
- Suitable for diverse tasks
Specifiche
Source Content uid | FDMC7660 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
ECCN Code | EAR99 | Factory Lead Time | 77 Weeks |
Avalanche Energy Rating (Eas) | 200 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 20 A | Drain-source On Resistance-Max | 0.0022 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | MO-240BA |
JESD-30 Code | S-PDSO-N5 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 5 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 41 W |
Pulsed Drain Current-Max (IDM) | 200 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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