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FDMA908PZ +BOM

Power MOSFET with P Channel, rated at 12 volts and capable of handling currents up to 12 amperes, featuring a low on-resistance of 12

Produttore:

Onsemi
ProduttorePart #:

FDMA908PZ
Scheda dati:

FDMA908PZ Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel

FDMA908PZ Descrizione generale

Designed with precision engineering and advanced features, the FDMA908PZ is a game-changer in battery charge and load switching technology for ultraportable applications. Its MOSFET with low on-state resistance and zener diode protection ensures smooth operation and robust protection against ESD, guaranteeing the longevity and reliability of your device. The MicroFET 2X2 package sets new benchmarks in thermal performance, making it an ideal choice for linear mode applications where efficiency is key. Enhance the power management capabilities of your cellular handset or ultraportable device with the FDMA908PZ, a cutting-edge solution that delivers unparalleled performance and innovation

Caratteristiche principali

Efficient design for low power consumption
Ultra-small size with high current handling
Robust ESD protection against voltage surges
Halogen-free and antimony-oxide free materials
Operating temperature range -40°C to 125°C
Mold compound UL94 V0 flammability rating

Applicazione

Highly versatile product
Suitable for multiple uses
A must-have for any job

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	12 A	Rds On - Drain-Source Resistance	13 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	600 mV
Qg - Gate Charge	34 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	2.4 W
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDMA908PZ	Configuration	Single
Fall Time	71 ns	Forward Transconductance - Min	60 S
Height	0.75 mm	Length	2 mm
Product Type	MOSFET	Rise Time	12 ns
Factory Pack Quantity	3000	Subcategory	MOSFETs
Transistor Type	1 P-Channel	Typical Turn-Off Delay Time	131 ns
Typical Turn-On Delay Time	11 ns	Width	2 mm
Unit Weight	0.001411 oz

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..