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FDMA86551L +BOM

Single N-Channel PowerTrench® MOSFET 60V, 7.5A, 23mΩ

Produttore:

onsemi
ProduttorePart #:

FDMA86551L
Scheda dati:

FDMA86551L Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDMA86551L

FDMA86551L Descrizione generale

The FDMA86551L MOSFET is a high-performance N-channel transistor designed for a variety of power management applications. With a continuous drain current rating of 7.5A and a drain-source voltage of 60V, this MOSFET offers reliable and efficient power handling capabilities. The on-resistance of 0.019ohm ensures minimal power loss and improved system efficiency. The MicroFET-6 package style features 6 pins, making it suitable for compact designs where space is limited. With a threshold voltage of 1.8V, this MOSFET is easy to drive and can be used in a wide range of applications. Operating at a maximum temperature of 150°C, the FDMA86551L is built to withstand harsh operating conditions. The PowerTrench Series designation indicates high performance and reliability, making this MOSFET an ideal choice for demanding power management tasks

Caratteristiche principali

Low Leakage Current - typically 1 nA @ 25°C, 10V
High Reliability - MTBF of 500,000 hours minimum
Wide Operating Temperature Range - from -40°C to +125°C

Applicazione

Easy to use and set up.
Quality product overall.
Definitely worth buying.

Specifiche

Source Content uid	FDMA86551L	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	67 Weeks
Application	SWITCHING	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	S-PDSO-N6	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	6
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	NICKEL PALLADIUM GOLD	Terminal Form	NO LEAD
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON

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Imballaggio

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