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Vedi Specifiche Tecniche

FDG8850NZ +BOM

Dual N-Channel PowerTrench® MOSFET 30V, 0.75A, 0.4Ω

Produttore:

onsemi
ProduttorePart #:

FDG8850NZ
Scheda dati:

FDG8850NZ Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDG8850NZ

FDG8850NZ Descrizione generale

Introducing the FDG8850NZ, a dual N-Channel logic level enhancement mode field effect transistor from Fairchild. This cutting-edge device is built using Fairchild's proprietary DMOS technology, ensuring superior performance and precision. Ideal for low voltage applications, the FDG8850NZ is designed to minimize on-state resistance, providing reliable and efficient operation. With its high cell density and innovative design, this transistor is a versatile solution for replacing both bipolar digital transistors and small signal MOSFETs. By eliminating the need for bias resistors, the FDG8850NZ simplifies circuit design and enhances overall system performance. Get ready to experience the next level of efficiency and functionality with the FDG8850NZ

Caratteristiche principali

Fast data transfer rates up to 100 Mbps for high-speed communication
Low standby power consumption for reduced energy waste
Precise control of output voltage with adjustable current limiting

Applicazione

Works for various tasks.
Great for everyday use.
Versatile in different jobs.

Specifiche

Source Content uid	FDG8850NZ	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	73 Weeks
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	0.75 A	Drain-source On Resistance-Max	0.4 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	25 pF
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	0.36 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..