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Vedi Specifiche Tecniche

FDG6321C +BOM

Dual N & P Channel Digital FET 25V

Produttore:

onsemi
ProduttorePart #:

FDG6321C
Scheda dati:

FDG6321C Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDG6321C

FDG6321C Descrizione generale

Introducing the FDG6321C, a compact yet powerful dual N/P channel Mosfet suitable for a wide range of electronic applications. With a drain source voltage of 25V for both N and P channels, this Mosfet offers excellent flexibility in circuit design. Its complementary N and P channel type allows for efficient use in various switching applications, while its continuous drain current of 500mA for the N channel ensures reliable performance under moderate load conditions. The 6-pin Sc-70 package is RoHS compliant, making it an environmentally friendly choice for your projects

Caratteristiche principali

Safe Operating Area Monitoring
Pulse-Width Modulation Support
Thermal Shutdown Protection

Applicazione

Highly versatile product choice.
Suitable for a range of needs.
Adaptable to different environments.

Specifiche

Source Content uid	FDG6321C	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	compliant
ECCN Code	EAR99	Factory Lead Time	4 Weeks
Additional Feature	LOGIC LEVEL COMPATIBLE	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	25 V	Drain Current-Max (ID)	0.5 A
Drain-source On Resistance-Max	0.45 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G6	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	6	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL	Power Dissipation-Max (Abs)	0.3 W
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..