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Vedi Specifiche Tecniche

FDG6316P +BOM

Packaged in Tape and Reel

Produttore:

Onsemi
ProduttorePart #:

FDG6316P
Scheda dati:

FDG6316P Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

2 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDG6316P

FDG6316P Descrizione generale

Ideal for low power applications requiring efficient power management, the FDG6316P MOSFET offers a unique combination of features for reliable performance. With a drain source voltage of -12V and a threshold voltage of -600mV, this P Channel transistor is capable of handling moderate power levels with ease. The transistor has a continuous drain current of 700mA and an on resistance of 221mohm, making it suitable for a wide range of switching operations. The SC-70 package with 6 pins allows for easy installation on circuit boards, while the power dissipation rating of 300mW ensures reliable operation under varying load conditions. The SMD termination type makes it convenient for surface mounting on PCBs, while the maximum voltage ratings guarantee safe operation in different electronic devices

Caratteristiche principali

-4 A, -2 V
R_DS(ON) = 10 mΩ @ V_GS = -1.5 V
R_DS(ON) = 80 mΩ @ V_GS = -2.3 V
Low Gate Current
High-Speed Trench Technology for Extremely Low R_DS(ON)
Compact industry standard SC70-6 surface mount package

Applicazione

Must-have for various tasks.
Trusted by professionals.
Ideal for everyday use.

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	12 V
Id - Continuous Drain Current	700 mA	Rds On - Drain-Source Resistance	270 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1.5 V
Qg - Gate Charge	2.4 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	300 mW
Channel Mode	Enhancement	Tradename	PowerTrench
Series	FDG6316P	Configuration	Dual
Fall Time	13 ns	Forward Transconductance - Min	2.5 S
Height	1.1 mm	Length	2 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	13 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	2 P-Channel
Type	MOSFET	Typical Turn-Off Delay Time	8 ns
Typical Turn-On Delay Time	5 ns	Width	1.25 mm
Part # Aliases	FDG6316P_NL	Unit Weight	0.000988 oz

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