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N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35mΩ
TSOT-23-6Produttore:
ProduttorePart #:
FDC653N
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
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The FDC653N is a powerful N-Channel enhancement mode field effect transistor that boasts a high cell density, thanks to its unique DMOS technology. This technology not only allows for enhanced performance but also significantly reduces on-state resistance, making this device ideal for a variety of low voltage applications. From notebook computers to portable phones to PCMICA cards, the FDC653N is designed to meet the demanding requirements of battery-powered circuits that necessitate fast switching speeds and minimal power loss. Its compact surface mount package further enhances its versatility, making it a top choice for engineers and designers looking to optimize space in their designs
Source Content uid | FDC653N | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 39 Weeks, 4 Days |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 5 A | Drain-source On Resistance-Max | 0.055 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 1.6 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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Prodotto 365 giorni
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