Metodo di pagamento
FDC6321C +BOM
Dual N & P Channel Digital FET 25V
SOT23-6-
Produttore:
-
ProduttorePart #:
FDC6321C
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Scheda dati:
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel, P-Channel
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Number Of Channels:
2 Channel
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EDA/CAD Modelli:
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Disponibilità: 6472 PZ
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FDC6321C Descrizione generale
Elevate your electronic projects with the innovative FDC6321C dual N & P Channel logic level enhancement mode field effect transistor. Engineered using a cutting-edge high cell density DMOS technology, this transistor boasts minimal on-state resistance for unrivaled performance in low voltage applications. Specifically designed to replace digital transistors in load switching applications, the FDC6321C eliminates the need for bias resistors, simplifying circuit design and enhancing overall efficiency. By consolidating multiple digital transistors with different bias resistors into a single dual digital FET, this transistor offers a versatile and cost-effective solution for a wide range of electronic applications. Trust the FDC6321C to deliver reliable, high-performance results for your next project
Caratteristiche principali
- High voltage, low current.
- Fast switching, low noise.
- High-speed, high-power.
- Low-voltage, high-current.
- Ultra-fast, ultra-low power.
- High-reliability, long lifetime.
Applicazione
- Great for all your needs.
- Perfect for any situation.
- Works well in various settings.
Specifiche
Product Category | MOSFET | Technology | Si |
Mounting Style | SMD/SMT | Transistor Polarity | N-Channel, P-Channel |
Number of Channels | 2 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 680 mA, 460 mA | Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 650 mV, 1.5 V |
Qg - Gate Charge | 2.3 nC, 1.5 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 900 mW |
Channel Mode | Enhancement | Series | FDC6321C |
Configuration | Dual | Fall Time | 8 ns, 9 ns |
Forward Transconductance - Min | 1.45 S, 0.8 S | Height | 1.1 mm |
Length | 2.9 mm | Product | MOSFET Small Signals |
Product Type | MOSFET | Rise Time | 8 ns, 9 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel, 1 P-Channel | Type | FET |
Typical Turn-Off Delay Time | 17 ns, 55 ns | Typical Turn-On Delay Time | 3 ns, 7 ns |
Width | 1.6 mm | Part # Aliases | FDC6321C_NL |
Unit Weight | 0.001270 oz |
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Prodotto 365 giorni
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In Stock: 6.472
Minimum Order: 1
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $0,375 | $0,38 |
10+ | $0,307 | $3,07 |
30+ | $0,276 | $8,28 |
100+ | $0,239 | $23,90 |
500+ | $0,224 | $112,00 |
1000+ | $0,215 | $215,00 |
I prezzi sottostanti sono solo di riferimento.