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FDC610PZ +BOM

The FDC610PZ is a P-channel MOSFET designed for a maximum voltage of 30V and a current of 4.9A, contained within a 6-pin TSOT-23 package

FDC610PZ Descrizione generale

The FDC610PZ is a high-performance Channel MOSFET designed for battery power applications. Utilizing advanced PowerTrench® technology, this MOSFET boasts minimal on state resistance and low gate charge, ensuring superior switching performance. Its versatility makes it well-suited for a range of applications, including load switching, power management, battery charging circuits, and DC/DC conversion. With its optimized design, the FDC610PZ is an ideal choice for engineers and designers looking for reliable and efficient solutions for their power needs

Caratteristiche principali

  • Small footprint, high performance
  • Low gate charge, fast switching
  • Efficient power consumption, RoHS compliant
  • Fast recovery time, low rDS(on)
  • SuperSOT package, reduced space requirements
  • High reliability, high performance MOSFET

Applicazione

  • Excellent for any job.
  • Works well in all situations.
  • Adaptable for many purposes.

Specifiche

Source Content uid FDC610PZ Pbfree Code Yes
Part Life Cycle Code Active Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.29.00.95
Factory Lead Time 46 Weeks Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (ID) 0.0049 A
Drain-source On Resistance-Max 0.042 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 190 pF JESD-30 Code R-PDSO-G6
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 6
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL Power Dissipation Ambient-Max 1.6 W
Power Dissipation-Max (Abs) 1.6 W Qualification Status Not Qualified
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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