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N-Channel PowerTrench® MOSFET 60V 4.3A, 55mΩ
TSOT-23-6Produttore:
ProduttorePart #:
FDC5612
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
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The FDC5612 N-Channel MOSFET offers unparalleled efficiency and performance for DC/DC converter applications. Its innovative design features faster switching speeds and lower gate charge, making it easier and safer to drive even at very high frequencies. These characteristics result in higher overall efficiency for power supply designs, ultimately leading to energy savings and improved system reliability. By incorporating the FDC5612 MOSFET into their designs, engineers can achieve superior performance and efficiency in their DC/DC converter circuits, making it an ideal choice for a wide range of applications
Source Content uid | FDC5612 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (ID) | 4.3 A |
Drain-source On Resistance-Max | 0.055 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | R-PDSO-G6 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 6 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 1.6 W |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Prodotto 365 giorni
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