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FDB52N20TM +BOM

Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK

Produttore:

onsemi
ProduttorePart #:

FDB52N20TM
Scheda dati:

FDB52N20TM Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per FDB52N20TM

FDB52N20TM Descrizione generale

The FDB52N20TM UniFET™ MOSFET offers high voltage capability, utilizing advanced planar stripe and DMOS technology. Through innovative design, this MOSFET effectively minimizes on-state resistance while delivering superior switching performance and increased avalanche energy strength. Ideal for a wide range of applications, this device is particularly well-suited for power converter systems, such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power units, and electronic lamp ballasts. With its optimized features, the FDB52N20TM MOSFET provides reliable and efficient operation in demanding voltage regulation and power management tasks

Caratteristiche principali

High power rating ( Max. 100W)
Low thermal resistance ( Typ. 50K/W)
High reliability tested
Fast switching times ( Typ. 10ns)

Applicazione

A must-have for everyone.
Versatile and practical.
Useful in various ways.

Specifiche

Source Content uid	FDB52N20TM	Pbfree Code	Yes
Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
ECCN Code	EAR99	Factory Lead Time	10 Weeks
Avalanche Energy Rating (Eas)	2520 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	200 V
Drain Current-Max (ID)	52 A	Drain-source On Resistance-Max	0.049 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-263
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	245	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	357 W	Pulsed Drain Current-Max (IDM)	208 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..