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30-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2, 42 mOhm, gate ESD protection
WSON-FET-6Produttore:
ProduttorePart #:
CSD87502Q2
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
ECCN Code:
EAR99
EDA/CAD Modelli:
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With its dual independent MOSFETs, the CSD87502Q2 offers unparalleled flexibility for a wide range of applications. Its compact 2 x 2 mm plastic package houses two FETs that are tailor-made for use in a half-bridge configuration, making it perfect for synchronous buck and various power supply applications. Additionally, these power MOSFETs are also well-suited for adaptor, USB input protection, and battery charging applications. Notably, the CSD87502Q2 stands out with its low drain-to-source on-resistance, which not only minimizes losses but also reduces the component count for space-constrained designs. This makes it a top choice for engineers and designers who prioritize efficiency and compactness in their projects
Source Content uid | CSD87502Q2 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 3.1 mJ |
Case Connection | DRAIN | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 5 A |
Drain-source On Resistance-Max | 0.06 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 29 pF | JESD-30 Code | S-PDSO-N6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 23 A |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | Product Category | MOSFET |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 5 A |
Rds On - Drain-Source Resistance | 35 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.6 V | Qg - Gate Charge | 2.2 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.3 W | Channel Mode | Enhancement |
Tradename | NexFET | Series | CSD87502Q2 |
Fall Time | 3 ns | Forward Transconductance - Min | 75 S |
Height | 0.75 mm | Length | 2 mm |
Product Type | MOSFET | Rise Time | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 2 N-Channel | Typical Turn-Off Delay Time | 12 ns |
Typical Turn-On Delay Time | 3 ns | Width | 2 mm |
Unit Weight | 0.000342 oz |
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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $0,256 | $0,26 |
10+ | $0,215 | $2,15 |
30+ | $0,196 | $5,88 |
100+ | $0,175 | $17,50 |
500+ | $0,165 | $82,50 |
1000+ | $0,159 | $159,00 |
I prezzi sottostanti sono solo di riferimento.