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CSD86311W1723 +BOM

25-V, N channel NexFET™ power MOSFET, dual common source WLP1.7 mm x 2.3 mm, 42 mOhm

Produttore:

Texas Instruments, Inc
ProduttorePart #:

CSD86311W1723
Scheda dati:

CSD86311W1723 Scheda dati (PDF)
Series:

NexFET™
Technology:

MOSFET (Metal Oxide)
Configuration:

2 N-Channel (Dual)
FET Feature:

Logic Level Gate
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per CSD86311W1723

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

CSD86311W1723 Descrizione generale

Experience the next level of efficiency and innovation with the CSD86311W1723, a revolutionary device that is designed to push the boundaries of what is possible in electronic componentry. Boasting unparalleled low on resistance and gate charge, this device is the go-to solution for applications where space is at a premium. Whether you're working on load management or DC-DC converters, the CSD86311W1723's compact footprint and exceptional thermal characteristics make it the perfect choice for projects where performance and size are crucial factors. Elevate your designs with the CSD86311W1723 and discover the power of cutting-edge technology at your fingertips

Caratteristiche principali

Dual N-Ch MOSFETs
Common Source Configuration
Small Footprint 1.7 mm × 2.3 mm
Ultra Low Q_g and Q_gd
Pb Free
RoHS Compliant
Halogen Free
APPLICATIONS
- Battery Management
- Battery Protection
- DC-DC Converters

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsFET, MOSFET Arrays	Series	NexFET™
Technology	MOSFET (Metal Oxide)	Configuration	2 N-Channel (Dual)
FET Feature	Logic Level Gate	Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	4.5A	Rds On (Max) @ Id, Vgs	39mOhm @ 2A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	585pF @ 12.5V	Power - Max	1.5W
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	CSD86311	VDS (V)	25
Rds(on) at VGS=4.5 V (max) (mΩ)	42	IDM - pulsed drain current (max) (A)	4.5
QG (typ) (nC)	3.1	QGD (typ) (nC)	0.33
QGS (typ) (nC)	0.85	VGS (V)	10
VGSTH typ (typ) (V)	1	ID - silicon limited at TC=25°C (A)	4.5
Logic level	Yes	Operating temperature range (°C)	-55 to 150
Rating	Catalog	feature-category	Power Block
feature-switching-frequency-khz		feature-minimum-operating-supply-voltage-v
feature-maximum-operating-supply-voltage-v		feature-maximum-supply-current-ma
feature-packaging	Tape and Reel	feature-maximum-power-dissipation-mw
feature-rad-hard		feature-pin-count	12
feature-cecc-qualified	No	feature-esd-protection	Yes
feature-military	No	feature-aec-qualified	No
feature-aec-qualified-number		feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	No

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