Single IGBTs
Insulated Gate Bipolar Transistor
HGT1S20N60C3S9A: A powerful 45A, 600V N-Channel IGBT
The manufacturing packaging quantity of SKB15N60 consists of 1000 units
Compact, high-voltage transistor design for demanding power conversion task
Ch IGBT Transistors 600 Volt 50 Amp
Featuring a TO3PN package, GT30J121 is an N-channel IGBT capable of enhancing performance at voltages up to 600V and currents up to 30A
The SGW30N60 from Infineon is an IGBT Transistor designed to handle currents up to 41A and voltages up to 600V
Compact, high-reliability power electronics component
Restricted to OEMs and CMs, no third-party involvement
IGBT Chip N-Channel 600V 75A 300W TO-247 Transistor
IGBT Transistors rated for 75 Amps and 1600V with 2.5 Ohms on-state resistance
Product description of SGB10N60A IGBT TO-263
Reliable V voltage blocking and current handling in TO-B packag
Ultra Field Stop IGBT 1200V 40A
N60A4, 17A, 600V, 3-Pin TO-220AB
Compact and robust IXGRNCmodule for high-current switching need
Exclusively available for OEMs and CMs, no intermediaries allowed
IGBT and Diode Combo Pack
Transistor Integrated Gate Bipolar Chip, N-channel, 500 Volts, 26 Amperes, TO-247 Enclosure