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SI7997DP-T1-GE3 +BOM

The SI7997DP-T1-GE3 is a P-type MOSFET with a maximum voltage of -20.8V, presented in a PowerPAK SO housing

Produttore:

VISHAY
ProduttorePart #:

SI7997DP-T1-GE3
Scheda dati:

SI7997DP-T1-GE3 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
Avalanche Energy Rating (Eas):

45 mJ
Case Connection:

DRAIN
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI7997DP-T1-GE3

SI7997DP-T1-GE3 Descrizione generale

Step up your power control game with the SI7997DP-T1-GE3, an advanced Power Field-Effect Transistor built for superior performance in diverse electronic devices. Boasting a hefty 60A I(D) and a low on-resistance of 0.0078ohm, this P-Channel Silicon Metal-oxide Semiconductor FET offers unparalleled power handling capabilities. Its 2-element construction provides added flexibility for intricate circuit designs, while the HALOGEN FREE AND ROHS COMPLIANT features underscore its commitment to environmental sustainability. Housed in a user-friendly POWERPAK, SOP-8 package, this transistor is designed for seamless integration and reliable operation in applications such as motor controls, battery management, and LED lighting. With the SI7997DP-T1-GE3, you can expect nothing less than optimal efficiency and enduring reliability

Caratteristiche principali

TrenchFET® power MOSFET

PWM optimized

100% Rg and UIS tested

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	not_compliant
Avalanche Energy Rating (Eas)	45 mJ	Case Connection	DRAIN
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	60 A	Drain-source On Resistance-Max	0.0078 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JESD-30 Code	R-XDSO-C5
JESD-609 Code	e3	Moisture Sensitivity Level	1
Number of Elements	2	Number of Terminals	5
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	150 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	46 W	Pulsed Drain Current-Max (IDM)	100 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	C BEND
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	40
Transistor Element Material	SILICON

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