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SI2365EDS-T1-GE3 +BOM

Low Voltage 4.5V 1V at 250uA

Produttore:

Vishay
ProduttorePart #:

SI2365EDS-T1-GE3
Scheda dati:

SI2365EDS-T1-GE3 Scheda dati (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

P-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI2365EDS-T1-GE3

SI2365EDS-T1-GE3 Descrizione generale

The SI2365EDS-T1-GE3 is a P-channel MOSFET with a drain source voltage of -20V and a continuous drain current of -5.9A. This MOSFET has a low on resistance of 0.0265ohm and a threshold voltage of -1V. With a power dissipation of 1.7W, this transistor is designed for high power applications. The SOT-23 package style with 3 pins makes it compact and easy to integrate into circuit designs. The operating temperature range of up to 150°C ensures reliable performance in various environments. The SI2365EDS-T1-GE3 is part of the TrenchFET Series, known for its high-quality and performance. It meets automotive qualification standards and has a MSL rating of MSL 1, indicating it can be stored indefinitely. This product does not contain any SVHC substances, making it environmentally friendly and compliant with regulations

Caratteristiche principali

High-speed switching
Low voltage drop
Compact package

Applicazione

Power Management for Portable and Consumer - Load Switches - DC/DC Converters

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	20 V
Id - Continuous Drain Current	5.9 A	Rds On - Drain-Source Resistance	26.5 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 8 V	Vgs th - Gate-Source Threshold Voltage	1 V
Qg - Gate Charge	13.8 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1.7 W
Channel Mode	Enhancement	Tradename	TrenchFET
Series	SI2	Configuration	Single
Fall Time	14 ns	Height	1.45 mm
Length	2.9 mm	Product Type	MOSFET
Rise Time	21 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	62 ns	Typical Turn-On Delay Time	22 ns
Width	1.6 mm	Part # Aliases	SI2365EDS-T1-BE3 SI4816DY-T1-E3-S
Unit Weight	0.000282 oz

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Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..