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SI2338DS-T1-GE3 +BOM

N-Channel 30 V 28 mOhm 13 nC Surface Mount Power Mosfet - SOT-23-3

Produttore:

VISHAY
ProduttorePart #:

SI2338DS-T1-GE3
Scheda dati:

SI2338DS-T1-GE3 Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
Configuration:

SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

30 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per SI2338DS-T1-GE3

SI2338DS-T1-GE3 Descrizione generale

The SI2338DS-T1-GE3 is a n-channel transistor designed for applications requiring a drain-source voltage of 30V and a continuous drain current of 6A. With an on-resistance of 0.023Ohm and a threshold voltage of 2.5V, this transistor offers efficient performance in various electronic circuits. The surface mount mounting style makes it easy to integrate into existing PCB designs, while the Rds(On) test voltage of 10V ensures reliable operation under specified conditions. Please note that this product is not RoHS compliant

Caratteristiche principali

Durable and reliable performance
Compact size with high power density

Applicazione

DC/DC Converters, High Speed Switching

Specifiche

Part Life Cycle Code	Active	Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	30 V
Drain Current-Max (ID)	6 A	Drain-source On Resistance-Max	0.028 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	Feedback Cap-Max (Crss)	42 pF
JEDEC-95 Code	TO-236AB	JESD-30 Code	R-PDSO-G3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2.5 W	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V	Id - Continuous Drain Current	6 A
Rds On - Drain-Source Resistance	28 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	4.2 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	2.5 W	Channel Mode	Enhancement
Tradename	TrenchFET	Series	SI2
Fall Time	7 ns	Product Type	MOSFET
Rise Time	11 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	20 ns	Typical Turn-On Delay Time	3 ns
Part # Aliases	SI2338DS-T1-BE3 SI2338DS-GE3	Unit Weight	0.000282 oz

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